sm-8 complementary medium power high gain transistors issue 1 - november 1995 partmarking detail ? T6790 absolute maximum ratings. parameter symbol npn pnp unit collector-base voltage v cbo 45 -50 v collector-emitter voltage v ceo 45 -40 v emitter-base voltage v ebo 5-5 v peak pulse current i cm 6-6 a continuous collector current i c 2-2 a operating and storage temperature range t j :t stg -55 to +150 c thermal characteristics parameter symbol value unit total power dissipation at t amb = 25c* any single die ?on? both die ?on? equally p tot 2.25 2.75 w w derate above 25c* any single die ?on? both die ?on? equally 18 22 mw/ c mw/ c thermal resistance - junction to ambient* any single die ?on? both die ?on? equally 55.6 45.5 c/ w c/ w * the power which can be dissipated assuming the device is mounted in a typical manner on a pcb with copper equal to 2 inches square. zdT6790 c 1 c 1 c 2 c 2 b 1 e 1 b 2 e 2 npn pnp 3 - 381 sm-8 (8 lead sot223)
npn transistor electrical characteristics (at t amb = 25c). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 45 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 45 v i c =10ma* emitter-base breakdown voltage v (br)ebo 5v i e =100 m a collector cutoff current i cbo 0.1 m a v cb =35v emitter cutoff current i ebo 0.1 m a v eb =4v collector-emitter saturation voltage v ce(sat) 0.1 0.5 v v i c =0.1a, i b =0.5ma* i c =1a, i b =5ma* base-emitter saturation voltage v be(sat) 0.9 v i c =1a, i b =10ma* base-emitter turn-on voltage v be(on) 0.9 v i c =1a, v ce =2v* static forward current transfer ratio h fe 500 400 150 i c =100ma, v ce =2v* i c =1a, v ce =2v* i c =2a, v ce =2v* transition frequency f t 150 mhz i c =50ma, v ce =5v f=50mhz input capacitance c ibo 200 pf v eb =0.5v, f=1mhz output capacitance c obo 16 pf v cb =10v, f=1mhz switching times t on t off 33 1300 ns i c =500ma, i b! =50ma i b2 =50ma, v cc =10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% for typical characteristics graphs see fzt690 datasheet. pnp transistor electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -50 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -40 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a collector cutoff current i cbo -0.1 m a v cb =-30v emitter cutoff current i ebo -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.25 -0.45 -0.75 v v v i c =-500ma, i b =-5ma* i c =-1a, i b =-10ma* i c =-2a, i b =-50ma* base-emitter saturation voltage v be(sat) -1.0 v i c =-1a, i b =-10ma* base-emitter turn-on voltage v be(on) -0.75 v i c =-1a, v ce =-2v* static forward current transfer ratio h fe 300 250 200 150 800 i c =-10ma, v ce =-2v i c =-500ma, v ce =-2v* i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* transition frequency f t 100 mhz i c =-50ma, v ce =-5v f=50mhz input capacitance c ibo 225 pf v eb =-0.5v, f=1mhz output capacitance c obo 24 pf v cb =-10v, f=1mhz switching times t on t off 35 600 ns i c =-500ma, i b1 =-50ma i b2 =-50ma, v cc =-10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% for typical characteristics graphs see fzt790 datasheet. zdT6790 zdT6790 3 - 382 3 - 383
npn transistor electrical characteristics (at t amb = 25c). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 45 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 45 v i c =10ma* emitter-base breakdown voltage v (br)ebo 5v i e =100 m a collector cutoff current i cbo 0.1 m a v cb =35v emitter cutoff current i ebo 0.1 m a v eb =4v collector-emitter saturation voltage v ce(sat) 0.1 0.5 v v i c =0.1a, i b =0.5ma* i c =1a, i b =5ma* base-emitter saturation voltage v be(sat) 0.9 v i c =1a, i b =10ma* base-emitter turn-on voltage v be(on) 0.9 v i c =1a, v ce =2v* static forward current transfer ratio h fe 500 400 150 i c =100ma, v ce =2v* i c =1a, v ce =2v* i c =2a, v ce =2v* transition frequency f t 150 mhz i c =50ma, v ce =5v f=50mhz input capacitance c ibo 200 pf v eb =0.5v, f=1mhz output capacitance c obo 16 pf v cb =10v, f=1mhz switching times t on t off 33 1300 ns i c =500ma, i b! =50ma i b2 =50ma, v cc =10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% for typical characteristics graphs see fzt690 datasheet. pnp transistor electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -50 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -40 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a collector cutoff current i cbo -0.1 m a v cb =-30v emitter cutoff current i ebo -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.25 -0.45 -0.75 v v v i c =-500ma, i b =-5ma* i c =-1a, i b =-10ma* i c =-2a, i b =-50ma* base-emitter saturation voltage v be(sat) -1.0 v i c =-1a, i b =-10ma* base-emitter turn-on voltage v be(on) -0.75 v i c =-1a, v ce =-2v* static forward current transfer ratio h fe 300 250 200 150 800 i c =-10ma, v ce =-2v i c =-500ma, v ce =-2v* i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* transition frequency f t 100 mhz i c =-50ma, v ce =-5v f=50mhz input capacitance c ibo 225 pf v eb =-0.5v, f=1mhz output capacitance c obo 24 pf v cb =-10v, f=1mhz switching times t on t off 35 600 ns i c =-500ma, i b1 =-50ma i b2 =-50ma, v cc =-10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% for typical characteristics graphs see fzt790 datasheet. zdT6790 zdT6790 3 - 382 3 - 383
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